ISU
Home
ISURF/OIPTT
Home
ISURFtech
Home
Advanced
Search
RSS
Feeds
A Method to Create Ultra-flat Metal Surfaces
Category(s):
For Information, Contact:
Craig Forney
Commercialization Manager, Chemistry and Materials Sciences
515-294-4740
licensing@iastate.edu
Web Published:
5/5/2016
ISURF #
4336
Summary:
ISU researchers have developed a method to produce ultra-flat metal surfaces without the compromises inherent to chemical-mechanical polishing (CMP).

Development Stage:
Description:
Ultra-flat surfaces are important commercially for the semiconductor fabrication industry, and also are of interest for scientific studies of self-assembled monolayers, bilayers, electrodes and single-molecules. There are several methods to create ultra-flat surfaces including CMP which is the most common method currently used but is often a method of compromises, attempting to balance material removal rate against the susceptibility to produce scratches and other faults into the material. ISU researchers have developed new method of creating ultra-flat surfaces through a “mechanical annealing” process. The technique involves the bombardment of a surface with atoms (principally from transition metals) that fill in surface faults and results in an atomically flat surface.

Advantage:
• Significant cost reduction compared to CMP
• Consistent, reproducible flat surface
• Very large semiconductor market
• Minimal cleanup after surface fabrication

Application:
Semiconductor fabrication and scientific research

Patent Information:
*To see the full version of the patent(s), follow the link below, then click on "Images" button.

Patent:
Patent(s) applied for

Direct Link: